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Volume 76, Issue 26
26 June 2000
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Research Article| June 26 2000
Elaine D. Haberer;
Elaine D. Haberer
Materials Department, University of California, Santa Barbara, California 93106
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Ching-Hui Chen;
Ching-Hui Chen
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
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Amber Abare;
Amber Abare
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
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Monica Hansen;
Monica Hansen
Materials Department, University of California, Santa Barbara, California 93106
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Steve Denbaars;
Steve Denbaars
Materials Department, University of California, Santa Barbara, California 93106
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Larry Coldren;
Larry Coldren
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
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Umesh Mishra;
Umesh Mishra
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
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Evelyn L. Hu
Evelyn L. Hu
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106
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Appl. Phys. Lett. 76, 3941–3943 (2000)
Article history
Received:
November 02 1999
Accepted:
May 05 2000
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Citation
Elaine D. Haberer, Ching-Hui Chen, Amber Abare, Monica Hansen, Steve Denbaars, Larry Coldren, Umesh Mishra, Evelyn L. Hu; Channeling as a mechanism for dry etch damage in GaN. Appl. Phys. Lett. 26 June 2000; 76 (26): 3941–3943. https://doi.org/10.1063/1.126828
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Etch damage of GaN was investigated using a quantum-well probe structure. A clear decrease in photoluminescence (PL) intensity was observed and was aggravated with increasing ion-beam voltage. The magnitude of decrease in PL intensity was much larger than expected, even greater than for GaAs subjected to similar etch conditions. Angle-dependent bombardment studies were carried out to investigate channeling as a damage mechanism in GaN. The large decrease in PL intensity observed near normal incidence or along the [0001] direction suggests that channeling is a damage mechanism for low-energy bombardment in GaN.
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